050-7393 rev c 2 -200 9 maximum ratings all ratings: t c = 25c unless otherwise specified. g d s caution: these devices are sensitive to electrostatic discharge. proper handling procedures should be followed. apt website - http://www.advancedpower.com to-247 d 3 pak apt1201r2bfll (g) apt1201r2sfll (g) 1200v 12a 1.2 5 ?? ?? ? power mos 7 ? is a new generation of low loss, high voltage, n-channel enhancement mode power mosfets. both conduction and switchinglosses are addressed with power mos 7 ? by significantly lowering r ds(on) and q g . power mos 7 ? combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with apt'spatented metal gate structure. lower input capacitance increased power dissipation lower miller capacitance easier to drive lower gate charge, qg to-247 or surface mount d 3 pak package characteristic / test conditionsdrain-source breakdown voltage (v gs = 0v, i d = 250a) drain-source on-state resistance 2 (v gs = 10v, i d = 6a) zero gate voltage drain current (v ds = 1200v, v gs = 0v) zero gate voltage drain current (v ds = 960v, v gs = 0v, t c = 125c) gate-source leakage current (v gs = 30v, v ds = 0v) gate threshold voltage (v ds = v gs , i d = 1ma) symbol v dss i d i dm v gs v gsm p d t j ,t stg t l i ar e ar e as parameterdrain-source voltage continuous drain current @ t c = 25c pulsed drain current 1 gate-source voltage continuousgate-source voltage transient total power dissipation @ t c = 25c linear derating factoroperating and storage junction temperature range lead temperature: 0.063" from case for 10 sec. avalanche current 1 (repetitive and non-repetitive) repetitive avalanche energy 1 single pulse avalanche energy 4 unit volts amps volts watts w/c c amps mj static electrical characteristics symbol bv dss r ds(on) i dss i gss v gs(th) unit volts ohms ana volts min typ max 1200 1.2 5 250 1000 100 35 apt1201r2bfll_sfll 1200 1248 3040 403 3.23 -55 to 150 300 1230 1300 power mos 7 r fredfet bfll sfll downloaded from: http:///
dynamic characteristics apt1201r2bfll_ sfll 050-7393 rev c 2 -200 9 source-drain diode ratings and characteristics thermal characteristics characteristic / test conditionscontinuous source current (body diode) pulsed source current 1 (body diode) diode forward voltage 2 (v gs = 0v, i s = -12a) peak diode recovery dv / dt 5 reverse recovery time(i s = -12a, di / dt = 100a/s) reverse recovery charge(i s = -12a, di / dt = 100a/s) peak recovery current(i s = -12a, di / dt = 100a/s) symbol i s i sm v sd dv / dt t rr q rr i rrm unit amps volts v/ns ns c amps min typ max 1248 1.3 18 t j = 25c 210 t j = 125c 710 t j = 25c 1.0 t j = 125c 3.6 t j = 25c 10 t j = 125c 14 symbol r jc r ja min typ max 0.31 40 unitc/w characteristicjunction to case junction to ambient 1 repetitive rating: pulse width limited by maximum junction temperature 2 pulse test: pulse width < 380 s, duty cycle < 2% 3 see mil-std-750 method 3471 4 starting t j = +25c, l = 18.06mh, r g = 25 ? , peak i l = 12a 5 dv / dt numbers reflect the limitations of the test circuit rather than the device itself. i s i d - 12a di / dt 700a/s v r 1200 t j 150 c 6 eon includes diode reverse recovery. see figures 18, 20. apt reserves the right to change, without notice, the specifications and information contained herein. note: duty factor d = t 1 / t 2 peak t j = p dm x z jc + t c t 1 t 2 p dm single pulse z jc , thermal impedance (c/w) 10 -5 10 -4 10 -3 10 -2 10 -1 1.0 rectangular pulse duration (seconds) figure 1, maximum effective transient thermal impedance, junction-to-case vs pulse duration 0.350.30 0.25 0.20 0.15 0.10 0.05 0 0.5 0.1 0.3 0.7 0.9 0.05 symbol c iss c oss c rss q g q gs q gd t d(on) t r t d(off) t f e on e off e on e off characteristicinput capacitance output capacitance reverse transfer capacitance total gate charge 3 gate-source charge gate-drain ("miller ") charge turn-on delay time rise time turn-off delay time fall time turn-on switching energy 6 turn-off switching energyturn-on switching energy 6 turn-off switching energy min typ max 2540 365 70 100 1465 8 1829 21 465100 935 135 unit pf nc ns j test conditions v gs = 0v v ds = 25v f = 1 mhz v gs = 10v v dd = 600v i d = 12a @ 25c resistive switching v gs = 15v v dd = 600v i d = 12a @ 25c r g = 1.6 ? inductive switching @ 25c v dd = 800v, v gs = 15v i d = 12a, r g = 5 ? inductive switching @ 125c v dd = 800v, v gs = 15v i d = 12a, r g = 5 ? downloaded from: http:///
050-7393 rev c 2 -200 9 apt1201r2bfll_sfll typical performance curves r ds (on), drain-to-source on resistance i d , drain current (amperes) i d , drain current (amperes) (normalized) v gs (th), threshold voltage bv dss , drain-to-source breakdown r ds (on), drain-to-source on resistance i d , drain current (amperes) (normalized) voltage (normalized) 0 5 10 15 20 25 30 0 1 2 3 4 5 6 7 8 0 2 4 6 8 101214161820 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 3025 20 15 10 50 1210 86 4 2 0 2.52.0 1.5 1.0 0.5 0.0 2520 15 10 05 0 1.401.30 1.20 1.10 1.00 0.90 0.80 1.15 1.10 1.05 1.00 0.95 0.90 0.85 1.21.1 1.0 0.9 0.8 0.7 0.6 t j = +125c t j = +25c t j = -55c v ds > i d (on) x r ds (on)max. 250sec. pulse test @ <0.5 % duty cycle v gs =10v v gs =20v 5.5v 6v 6.5v 7v 5v v gs =15,10 & 8v v ds , drain-to-source voltage (volts) figure 2, transient thermal impedance model figure 3, low voltage output characteristics v gs , gate-to-source voltage (volts) i d , drain current (amperes) figure 4, transfer characteristics figure 5, r ds (on) vs drain current t c , case temperature (c) t j , junction temperature (c) figure 6, maximum drain current vs case temperature figure 7, breakdown voltage vs temperature t j , junction temperature (c) t c , case temperature (c) figure 8, on-resistance vs. temperature figure 9, threshold voltage vs temperature 0.02580.107 0.177 0.00295f0.0114f 0.174f power (watts) junctiontemp. ( c) rc model case temperature. ( c) normalized to v gs = 10v @ i d = 6a i d = 6a v gs = 10v downloaded from: http:///
apt1201r2bfll_sfll 050-7393 rev c 2 -200 9 v ds , drain-to-source voltage (volts) v ds , drain-to-source voltage (volts) figure 10, maximum safe operating area figure 11, capacitance vs drain-to-source voltage q g , total gate charge (nc) v sd , source-to-drain voltage (volts) figure 12, gate charges vs gate-to-source voltage figure 13, source-drain diode forward voltage 10,000 5,0001,000 100 10 200100 10 1 v gs , gate-to-source voltage (volts) i d , drain current (amperes) i dr , reverse drain current (amperes) c, capacitance (pf) 1 10 100 1200 0 10 20 30 40 50 0 20 40 60 80 100 120 140 0.3 0.5 0.7 0.9 1.1 1.3 1.5 4810 51 .1 1612 84 0 c rss c iss c oss t j =+150c t j =+25c v ds =250v v ds =100v v ds =400v i d = 12a t c =+25c t j =+150c single pulse operation here limited by r ds (on) 10ms 1ms 100s i d (a) i d (a) figure 14, delay times vs current figure 15, rise and fall times vs current i d (a) r g , gate resistance (ohms) figure 16, switching energy vs current figure 17, switching energy vs. gate resistance v dd = 800v r g = 5 ? t j = 125c l = 100h e on e off t r t f switching energy ( j) t d(on) and t d(off) (ns) switching energy ( j) t r and t f (ns) 5 10 15 20 5 10 15 20 5 10 15 20 0 5 101520253035404550 v dd = 800v i d = 12a t j = 125c l = 100h e on includes diode reverse recovery. t d(on) t d(off) e on e off 8070 60 50 40 30 20 10 0 16001400 1200 1000 800600 400 200 0 v dd = 800v r g = 5 ? t j = 125c l = 100h v dd = 800v r g = 5 ? t j = 125c l = 100h e on includes diode reverse recovery. 5040 30 20 10 0 14001200 1000 800600 400 200 0 downloaded from: http:///
050-7393 rev c 2 -200 9 apt1201r2bfll_sfll typical performance curves 15.49 (.610)16.26 (.640) 5.38 (.212)6.20 (.244) 6.15 (.242) bsc 4.50 (.177) max. 19.81 (.780)20.32 (.800) 20.80 (.819)21.46 (.845) 1.65 (.065)2.13 (.084) 1.01 (.040)1.40 (.055) 3.50 (.138)3.81 (.150) 2.87 (.113)3.12 (.123) 4.69 (.185)5.31 (.209) 1.49 (.059) 2.49 (.098) 2.21 (.087)2.59 (.102) 0.40 (.016)0.79 (.031) drain drain source gate 5.45 (.215) bsc dimensions in millimeters and (inches) 2-plcs. to - 247 package outline (bfll) 15.95 (.628)16.05(.632) 1.22 (.048)1.32 (.052) 5.45 (.215) bsc{2 plcs.} 4.98 (.196)5.08 (.200) 1.47 (.058) 1.57 (.062) 2.67 (.105)2.84 (.112) 0.46 (.018) {3 plcs} 0.56 (.022) dimensions in millimeters (inches) heat sink (drain)and leads are plated 3.81 (.150)4.06 (.160) (base of lead) drain(heat sink) 1.98 (.078)2.08 (.082) gate drain source 0.020 (.001)0.178 (.007) 1.27 (.050)1.40 (.055) 11.51 (.453)11.61 (.457) 13.41 (.528)13.51(.532) revised8/29/97 1.04 (.041)1.15(.045) 13.79 (.543)13.99(.551) revised 4/18/95 d 3 pak package outline (sfll) apts products are covered by one or more of u.s.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. us and foreign patents pending. all rights reserved. figure 18, turn-on switching waveforms and definitions figure 19, turn-off switching waveforms and definitions t j = 125c drainvoltage drain current gate voltage 90% 90% 10% t f 0 t d(off) switching energy 10% 90% 10% t r 5% t d(on) switching energy 5% drain current drainvoltage gate voltage t j = 125c i c d.u.t. apt15df120b v ce figure 20, inductive switching test circuit g v dd downloaded from: http:///
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